Electronic transport properties of the Bi0.5As1.5Te2.98Se0.02 single crystal. Pt. 1
Požega, Emina
Miletić, Slavica
Rajković, Radmilo
Petrović, Ana
Jovanović, Milenko
Mitrović, Milijana
Marjanović, Saša
Abstract: Bismuth telluride thermoelectric material with the composition of Bi0.5As1.5Te2.98Se0.02 was studied in this work. During the experiment, the values of conductivity (σ), resistivity (ρ), Hall coefficient (RH), magnetic resistance (ΔR) and vertical/horizontal resistance ratio (α) were examined using a Hall Effect system based on the Van der Pauw method. The Hall Effect was measured at temperature of liquid nitrogen with silver contacts with an applied magnetic field strength of 0.37 T at different current intensities. Measurements of the Hall effect and thermoelectric properties at currents of 0.05 and 0.1 mA indicate that bulk sample was p-type conduction, suggesting that major conductivity carriers were holes. At current of 0.5 mA Hall coefficient was negative.
engleski
2022
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Keywords: electronic transport properties, Hall and Van der Pauw method, single crystal.